Compositional dependence of epitaxial Tin+1SiCn MAX-phase thin films grown from a Ti3SiC2 compound target
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چکیده
منابع مشابه
High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target
We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film m...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A
سال: 2019
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.5065468